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| HMC292 v06.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Typical Applications The HMC292 is ideal for: * Microwave Point-to-Point Radios * LMDS * SATCOM Features Input IP3: +19 dBm LO / RF Isolation: 38 dB Passive: No DC Bias Required Small Size: 1.04 x 0.58 x 0.1 mm 4 MIXERS - DOUBLE-BALANCED - CHIP Functional Diagram General Description The HMC292 chip is a miniature passive GaAs MMIC double-balanced mixer which can be used as an upconverter or downconverter from 18 - 32 GHz in a small chip area of 0.66 mm2. Excellent isolations are provided by on-chip baluns, which require no external components and no DC bias. All data is measured with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). Electrical Specifi cations, TA = +25 C LO = +13 dBm Parameter Min. Frequency Range, RF & LO Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) IP2 (Input) 1 dB Gain Compression (Input) 30 31 20 17 45 8 Typ. 20 - 30 DC - 8 7.5 7.5 38 40 24 19 50 12 9.5 9.5 30 28 17 15 42 8 Max. Min. Typ. 18 - 32 DC - 8 9 9 38 40 24 19 50 12 11 11 Max. GHz GHz dB dB dB dB dB dB dBm dBm LO = +13 dBm Units 4 - 48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC292 v06.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Isolation @ LO = +13 dBm 0 LO/RF LO/IF RF/IF Conversion Gain vs. Temperature @ LO = +13 dBm 0 CONVERSION GAIN (dB) -10 -5 ISOLATION (dB) -20 -10 -30 -15 +25 C +85 C -55 C -40 4 15 20 25 FREQUENCY (GHz) 30 35 15 20 25 FREQUENCY (GHz) 30 35 Conversion Gain vs. LO Drive 0 +8 dBm +10 dBm +13 dBm +15 dBm RF & LO Return Loss @ LO = +13 dBm 0 LO RF -10 RETURN LOSS (dB) -5 -5 -10 -15 -15 -20 15 20 25 FREQUENCY (GHz) 30 35 -20 15 20 25 FREQUENCY (GHz) 30 35 IF Bandwidth @ LO = +13 dBm IF CONVERSION GAIN & RETURN LOSS (dB) 0 Upconverter Performance Conversion Gain @ LO = +13 dBm 0 CONVERSION GAIN (dB) -5 -5 -10 -10 -15 CONVERSION GAIN (dB) RETRUN LOSS -15 -20 0 2 4 6 8 10 IF FREQUENCY (GHz) -20 15 20 25 FREQUENCY (GHz) 30 35 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 49 MIXERS - DOUBLE-BALANCED - CHIP -20 -50 CONVERSION GAIN (dB) HMC292 v06.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Input IP3 vs. Temperature @ LO = +13 dBm 25 Input IP3 vs. LO Drive 25 20 15 IP3 (dBm) 20 IP3 (dBm) 15 -55C +25C +85C 10 5 0 -5 15 20 25 FREQUENCY (GHz) 30 35 +8 dBm +10 dBm +13 dBm 10 4 MIXERS - DOUBLE-BALANCED - CHIP 5 0 15 20 25 FREQUENCY (GHz) 30 35 Input IP2 vs. LO Drive 80 70 60 IP2 (dBm) Input IP2 vs. Temperature @ LO = +13 dBm 80 70 60 IP2 (dBm) 50 40 30 20 10 0 -55C +25C +85C 50 40 30 20 10 0 15 20 25 FREQUENCY (GHz) 30 35 +8 dB, +10 dBm +13 dBm 15 20 25 FREQUENCY (GHz) 30 35 Input P1dB vs. Temperature @ LO = +13 dBm 15 MxN Spurious Outputs nLO mRF 0 xx 17 1 11 0 70 39 77 93 >110 76 69 >110 86 >110 2 3 4 13 0 1 2 11 P1dB -55C +25C +85C 9 3 4 7 RF = 21 GHz @ -10 dBm LO = 22 GHz @ +13 dBm All values in dBc below the IF power level. 15 20 25 FREQUENCY (GHz) 30 35 5 4 - 50 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC292 v06.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Absolute Maximum Ratings RF / IF Input LO Drive Channel Temperature Continuous Pdiss (T=85 C) (derate 4 mW/C above 85 C) Thermal Resistance (RTH) (junction to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +13 dBm +27 dBm 150 C 260 mW 250 C/W -65 to +150 C -55 to +85 C Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 4 MIXERS - DOUBLE-BALANCED - CHIP NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004". 3. TYPICAL BOND PAD IS .004" SQUARE. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Outline Drawing Die Packaging Information [1] Standard GP-5 Alternate [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 51 HMC292 v06.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Pad Descriptions Pad Number Function Description Interface Schematic 1 LO This pin is DC coupled and matched to 50 Ohms. 4 2 RF This pin is DC coupled and matched to 50 Ohms. MIXERS - DOUBLE-BALANCED - CHIP 3 IF This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/ sink more than 2 mA of current or die non-function and possible die failure will result. Die Bottom GND Die bottom must be connected to RF/DC ground. 4 - 52 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC292 v06.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane 4 MIXERS - DOUBLE-BALANCED - CHIP 4 - 53 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
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